Browsing by author "Fantini, Andrea"
Now showing items 21-40 of 117
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Development of a resistive memory-based, radiation-hardened cache memory for space flight and mission-critical applications
Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Alles, M.; Zhang, E.X.; Weeden-Wright, S.; Jurczak, Gosia; Linten, Dimitri; Fantini, Andrea (2014) -
Doped Gd-O based RRAM for embedded application
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016) -
Dynamic 'Hour Glass' model for SET and RESET in HfO2 RRAM
Degraeve, Robin; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Goux, Ludovic; Chen, Yangyin; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Pourtois, Geoffrey; Cosemans, Stefan; Kittl, Jorge; Groeseneken, Guido; Jurczak, Gosia; Altimime, Laith (2012) -
Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM
Linten, Dimitri; Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Alles, M.; Zhang, E.X.; Weeden-Wright, S.; Jurczak, Gosia; Fantini, Andrea (2014) -
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
Reale, G.; Belmonte, Attilio; Fantini, Andrea; Radhakrishnan, Janaki; Redolfi, Augusto; Devulder, Wouter; Nyns, Laura; Kundu, Shreya; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Efficient reliability testing of emerging memory technologies using multiple radiation sources
Bennet, W.G.; Hooten, N.C.; Weeded-Wright, S.; Schrimpf, R.D.; Reed, R.A.; Alles, M.C.; Zhang, E.X.; Mc Curdy, M.W.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014) -
Enabling CD SEM metrology for 5nm technology node and beyond
Lorusso, Gian; Ohashi, Takeyoshi; Yamaguchi, Astuko; Inoue, Osamu; Sutani, Takumichi; Horiguchi, Naoto; Boemmels, Juergen; Wilson, Chris; Briggs, Basoene; Tan, Chi Lim; Raymaekers, Tom; Delhougne, Romain; Van den Bosch, Geert; Di Piazza, Luca; Kar, Gouri Sankar; Furnemont, Arnaud; Fantini, Andrea; Donadio, Gabriele Luca; Souriau, Laurent; Crotti, Davide; Yasin, Farrukh; Appeltans, Raf; Rao, Siddharth; De Simone, Danilo; Rincon Delgadillo, Paulina; Leray, Philippe; Charley, Anne-Laure; Zhou, Daisy; Veloso, Anabela; Collaert, Nadine; Hasumi, Kazuhisa; Koshihara, Shunsuke; Ikota, Masami; Okagawa, Yutaka; Ishimoto, Toru (2017) -
Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Chen, Yangyin; Groeseneken, Guido; Jurczak, Gosia (2015) -
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme
Hatem, Firas Odai Hatem; Chai, Z.; Zhang, Wei; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Garbin, Daniele; Robertson, J.; Guo, Y,; Zhang, J.F.; Marsland, John; Freitas, Pedro; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Endurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM
Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Degraeve, Robin; Kar, Gouri Sankar; Fantini, Andrea; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Engineering and stack optimization of Cu-based selector devices for low power SCM applications
Barci, Marinela; Fantini, Andrea; Redolfi, Augusto; Kundu, Shreya; Devulder, Wouter; Opsomer, Karl; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar; Witters, Thomas (2018) -
Engineering of a TiN\Al2O3\(Hf,Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2015) -
Engineering of Hf1-xAlxOy amorphous dielectrics for high-performance RRAM applications
Fantini, Andrea; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Adelmann, Christoph; Polimeni, Giuseppe; Chen, Yangyin; Komura, Masanori; Belmonte, Attilio; Wouters, Dirk; Jurczak, Gosia (2014) -
Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors
Degraeve, Robin; Chai, Zheng; Zhang, W; Clima, Sergiu; Hatem, F; Zhang, JF; Freitas, P; Marsland, J; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Evidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells
Goux, Ludovic; Fantini, Andrea; Chen, Yangyin; Redolfi, Augusto; Degraeve, Robin; Jurczak, Gosia (2014) -
Excellent Roff/Ron ratio and short programming time in Cu/Al2O3-based conductive-bridge RAM under low-current (10μA) operation
Belmonte, Attilio; Fantini, Andrea; Degraeve, Robin; Redolfi, Augusto; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Fast and stable sub-10μA pulse operation in W/SiO2/Ta/Cu 90nm 1T1R CBRAM
Belmonte, Attilio; Fantini, Andrea; Degraeve, Robin; Celano, Umberto; Vandervorst, Wilfried; Redolfi, Augusto; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application
Kumar, Ankit; Degraeve, Robin; Beckers, Arthur; Fantini, Andrea; Verbauwhede, Ingrid; Linten, Dimitri; Kar, Gouri Sankar (2023) -
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Goux, Ludovic; Sankaran, Kiroubanand; Kar, Gouri Sankar; Jossart, Nico; Opsomer, Karl; Degraeve, Robin; Pourtois, Geoffrey; Rignanese, G.-M.; Detavernier, C.; Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Govoreanu, Bogdan; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2012) -
First-principles thermodynamic and kinetic aspects of the switching in Cu-based and HfOx-based RRAM stacks
Clima, Sergiu; Sankaran, Kiroubanand; Degraeve, Robin; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2014)