Browsing by author "Hody, Hubert"
Now showing items 1-20 of 40
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300 mm-wafer metrology for area-selective deposition in nanoscale patterns: A case study for ruthenium atomic layer deposition
Clerix, Jan-Willem; Warad, L.; Hung, J.; Hody, Hubert; Van Roey, Frieda; Lorusso, Gian; Koret, R.; Lee, W. T.; Shah, K.; Delabie, Annelies (2023) -
3D FinFET gate etch for advanced CMOS scaling
Dupuy, Emmanuel; Altamirano Sanchez, Efrain; Marinov, Daniil; Hody, Hubert; Mertens, Hans; Siew, Yong Kong; Demuynck, Steven; Horiguchi, Naoto (2019) -
A method to pattern tight tip-to-tip in 32nm-pitch N5 interconnect using Ru area selective deposition tone inversion process
Briggs, Basoene; Soethoudt, Job; Delabie, Annelies; Wilson, Chris; Tokei, Zsolt; Boemmels, Juergen; Devriendt, Katia; Sebaai, Farid; Lorant, Christophe; Hody, Hubert (2018) -
a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Govoreanu, Bogdan; Crotti, Davide; Subhechha, Subhali; Zhang, Leqi; Chen, Yangyin; Clima, Sergiu; Paraschiv, Vasile; Hody, Hubert; Adelmann, Christoph; Popovici, Mihaela Ioana; Richard, Olivier; Jurczak, Gosia (2015) -
Carbon-based liner for RESET current reduction in self-heating phase-change memory cells
De Proft, Anabel; Garbin, Daniele; Donadio, Gabriele Luca; Hody, Hubert; Witters, Thomas; Lodewijks, Kristof; Rottenberg, Xavier; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2020) -
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory
Ravsher, Taras; Degraeve, Robin; Garbin, Daniele; Clima, Sergiu; Fantini, Andrea; Donadio, Gabriele Luca; Kundu, Shreya; Devulder, Wouter; Hody, Hubert; Potoms, Goedele; Van Houdt, Jan; Afanasiev, Valeri; Belmonte, Attilio; Kar, Gouri Sankar (2024) -
Defect Mitigation in Area-Selective Atomic Layer Deposition of Ruthenium on Titanium Nitride/Dielectric Nanopatterns
Soethoudt, Job; Hody, Hubert; Spampinato, Valentina; Franquet, Alexis; Briggs, Basoene; Chan, BT; Delabie, Annelies (2019) -
Defect mitigation solution for area-selective ALD of Ru on TiN/SiO2 nanopatterns
Soethoudt, Job; Grillo, Fabio; Marques, Esteban; Van Ommen, Ruud; Briggs, Basoene; Hody, Hubert; Spampinato, Valentina; Franquet, Alexis; Chan, BT; Delabie, Annelies (2019) -
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors
Ravsher, Taras; Fantini, Andrea; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Hody, Hubert; Dekkers, Harold; Witters, Thomas; Van Houdt, Jan; Afanas'ev, Valeri; Couet, Sebastien; Kar, Gouri Sankar (2022) -
Design-technology co-optimization for OxRRAM-based synaptic processing unit
Mallik, Arindam; Garbin, Daniele; Fantini, Andrea; Rodopoulos, Dimitrios; Degraeve, Robin; Stuijt, Jan; Das, Anup Kumar; Schaafsma, Siebren; Debacker, Peter; Donadio, Gabriele Luca; Hody, Hubert; Goux, Ludovic; Kar, Gouri Sankar; Furnemont, Arnaud; Mocuta, Anda; Raghavan, Praveen (2017) -
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
Subhechha, Subhali; Rassoul, Nouredine; Belmonte, Attilio; Hody, Hubert; Dekkers, Harold; van Setten, Michiel; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Banerjee, Kaustuv; Puliyalil, Harinarayanan; Kundu, Souvik; Pak, Murat; Tsvetanova, Diana; Bazzazian, Nina; Vandersmissen, Kevin; Batuk, Dmitry; Geypen, Jef; Heijlen, Jeroen; Delhougne, Romain; Kar, Gouri Sankar (2022) -
Double patterning with dual hard mask for 28nm node devices and below
Hody, Hubert; Paraschiv, Vasile; Vecchio, Emma; Locorotondo, Sabrina; Winroth, Gustaf; Athimulam, Raja; Boullart, Werner (2013) -
Double patterning with dual hard mask for 28nm node devices and below
Hody, Hubert; Paraschiv, Vasile; Vecchio, Emma; Locorotondo, Sabrina; Winroth, Gustaf; Athimulam, Raja; Boullart, Werner (2013) -
Gate double patterning strategies for 10nm node FinFET devices
Hody, Hubert; Paraschiv, Vasile; Hellin, David; Vandeweyer, Tom; Boccardi, Guillaume; Xu, Kaidong (2014) -
High performance oxide diode
Radu, Iuliana; Govoreanu, Bogdan; Ikram, Rafay; Peter, Antony; Martens, Koen; Hody, Hubert; Kim, Woosik; Toeller, Michael; Paraschiv, Vasile; Favia, Paola; Clima, Sergiu; De Gendt, Stefan; Heyns, Marc; Stesmans, Andre; Jurczak, Gosia (2013) -
High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance
Zhang, Leqi; Redolfi, Augusto; Crotti, Davide; Adelmann, Christoph; Clima, Sergiu; Chen, Yangyin; Opsomer, Karl; Subhechha, Subhali; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia; Govoreanu, Bogdan; Cosemans, Stefan; Richard, Olivier; Bender, Hugo; Hendrickx, Paul; Witters, Thomas; Hody, Hubert; Paraschiv, Vasile; Radu, Iuliana (2014) -
High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor
Popovici, Mihaela Ioana; Belmonte, Attilio; Oh, Hyungrock; Potoms, Goedele; Meersschaut, Johan; Richard, Olivier; Hody, Hubert; Van Elshocht, Sven; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2018) -
IGZO integration scheme for enabling IGZO nFETs
Kljucar, Luka; Mitard, Jerome; Rassoul, Nouredine; Dekkers, Harold; Steudel, Soeren; del Agua Borniquel, Jose Ignacio; De Wachter, Bart; Teugels, Lieve; Tsvetanova, Diana; Devriendt, Katia; Grisin, Ilja; Boccardi, Guillaume; Hody, Hubert; Nag, Manoj; Di Piazza, Luca; Wilson, Chris; Kar, Gouri Sankar; Tokei, Zsolt; Ramalingam, J.; Cao, Yong; Diehl, Daniel L. (2019) -
Insight in growth mechanism of Ru ALD on dielectrics
Soethoudt, Job; Tomczak, Yoann; Grillo, Fabio; Hody, Hubert; Marques, Esteban; Van Ommen, Ruud; Altamirano Sanchez, Efrain; Delabie, Annelies (2018) -
Investigation of physical and electrical scaling limits of strontium titanate in metal-insulator-metal capacitors for DRAM technology
Popovici, Mihaela Ioana; Redolfi, Augusto; Kaczer, Ben; Hody, Hubert; Jurczak, Gosia; Van Elshocht, Sven (2016)