Browsing by author "Afanas'ev, Valeri"
Now showing items 1-17 of 17
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Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Chou, H.-Y; Afanas'ev, Valeri; Houssa, Michel; Stesmans, Andre; Vincent, Benjamin; Gencarelli, Federica; Shimura, Yosuke; Merckling, Clement; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2014) -
Dangling bond defects in silicon-passivated strained-Si1xGex channel layers
Madia, Oreste; Kepa, Jacek; Afanas'ev, Valeri; Franco, Jacopo; Kaczer, Ben; Hikavyy, Andriy; Stesmans, Andre (2020) -
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors
Ravsher, Taras; Fantini, Andrea; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Hody, Hubert; Dekkers, Harold; Witters, Thomas; Van Houdt, Jan; Afanas'ev, Valeri; Couet, Sebastien; Kar, Gouri Sankar (2022) -
Direct measurement of barrier height at the HfO2/poly-Si interface:
Pantisano, Luigi; Chen, Pei Jun; Afanas'ev, Valeri; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; Groeseneken, Guido (2004-06) -
Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks
Pawlak, Malgorzata; Swerts, Johan; Popovici, Mihaela Ioana; Kaczer, Ben; Kim, Min-Soo; Wang, Wan-Chih; Tomida, Kazuyuki; Govoreanu, Bogdan; Delmotte, Joris; Afanas'ev, Valeri; Schaekers, Marc; Vandervorst, Wilfried; Kittl, Jorge (2012) -
Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain
Mellaerts, Simon; Afanas'ev, Valeri; Seo, Jin Won; Houssa, Michel; Locquet, Jean-Pierre (2021) -
Electron photoemission from conducting nitrides (TiNx, TaNx) into SiO2 and HfO2
Afanas'ev, Valeri; Stesmans, Andre; Pantisano, Luigi; Schram, Tom (2005-06) -
Enhancing the quality of low temperature SiO2 by atomic hydrogen exposure for excellent NBTI reliability
Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, Al-Moatasem; Jech, Markus; Waldhoer, Dominic; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, Valeri; Stesmans, Andre; Horiguchi, Naoto; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2020) -
Hole-doping induced ferromagnetism in 2D materials
Meng, Ruishen; Pereira, Lino da Costa; Locquet, Jean-Pierre; Afanas'ev, Valeri; Pourtois, Geoffrey; Houssa, Michel (2022) -
Metal induced charge transfer doping in graphene-ruthenium hybrid interconnects
Achra, Swati; Wu, Xiangyu; Trepalin, Vadim; Nuytten, Thomas; Ludwig, Jonathan; Afanas'ev, Valeri; Brems, Steven; Soree, Bart; Tokei, Zsolt; Heyns, Marc; Asselberghs, Inge (2021) -
Origin of supertetragonality in BaTiO3
Mellaerts, Simon; Seo, Jin Won; Afanas'ev, Valeri; Houssa, Michel; Locquet, Jean-Pierre (2022) -
Paramagnetic oxide defects in Sc2O3-passivated (100)Ge/HfO2 stacks
Stesmans, Andre; Iacovo, Serena; Cott, Daire; Thean, Aaron; Arimura, Hiroaki; Sioncke, Sonja; Afanas'ev, Valeri (2014) -
Paramagnetic oxide traps in Sc2O3-passivated (1 0 0) Ge/HfO2 stacks
Stesmans, Andre; Iacovo, S.; Cott, Daire; Thean, Aaron; Arimura, Hiroaki; Sioncke, Sonja; Afanas'ev, Valeri (2015) -
Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities
Ravsher, Taras; Degraeve, Robin; Garbin, Daniele; Fantini, Andrea; Clima, Sergiu; Donadio, Gabriele Luca; Kundu, Shreya; Hody, Hubert; Devulder, Wouter; Van Houdt, Jan; Afanas'ev, Valeri; Delhougne, Romain; Kar, Gouri Sankar (2021-12) -
Polarity-Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition
Ravsher, Taras; Garbin, Daniele; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Donadio, Gabriele Luca; Kundu, Shreya; Hody, Hubert; Devulder, Wouter; Van Houdt, Jan; Afanas'ev, Valeri; Delhougne, Romain; Kar, Gouri Sankar (2023) -
Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
Ravsher, Taras; Garbin, Daniele; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Donadio, Gabriele Luca; Kundu, Shreya; Hody, Hubert; Devulder, Wouter; Van Houdt, Jan; Afanas'ev, Valeri; Delhougne, Romain; Kar, Gouri Sankar (2023-05) -
Valence-band electron-tunneling measurement of the gate work function: application to the high-k / polycrystalline-silicon interface
Pantisano, Luigi; Afanas'ev, Valeri; Pourtois, Geoffrey; Chen, Pei Jun (2005)