Browsing by author "Delhougne, Romain"
Now showing items 1-20 of 105
-
300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility
Kljucar, Luka; Smets, Quentin; van Setten, Michiel; Mitard, Jerome; Belmonte, Attilio; Dekkers, Harold; Teugels, Lieve; Mao, Ming; Puliyalil, Harinarayanan; del Agua Borniquel, Jose Ignacio; Delhougne, Romain; Sankaran, Kiroubanand; Tokei, Zsolt (2020) -
A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector
Devulder, Wouter; Garbin, Daniele; Clima, Sergiu; Donadio, Gabriele Luca; Fantini, Andrea; Govoreanu, Bogdan; Detavernier, Christophe; Chen, Larry; Miller, Michael; Goux, Ludovic; Van Elshocht, Sven; Swerts, Johan; Delhougne, Romain; Kar, Gouri Sankar (2022-07-01) -
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2019) -
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Carolan, Patrick; Bender, Hugo; Kar, Gouri Sankar (2020) -
A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell
Goux, Ludovic; Hurkx, Fred; Wang, Xin Peng; Delhougne, Romain; Attenborough, Karen; Gravesteijn, Dirk; Wouters, Dirk; Perez Gonzalez, Jesus (2011) -
A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories
Goux, Ludovic; Hurkx, Fred; Wang, Xin Peng; Delhougne, Romain; Attenborough, Karen; Gravesteijn, Dirk; Wouters, Dirk; Perez Gonzalez, Jesus (2010) -
(A)thermal migration of Ge during junction formation in a-Si layers grown on thin SiGe-buffer layers
Vandervorst, Wilfried; Pawlak, Bartek; Janssens, Tom; Brijs, Bert; Delhougne, Romain; Caymax, Matty; Loo, Roger (2004) -
(A)thermal migration of Ge during junction formation in s-Si grown on thin SiGe-buffer layers
Vandervorst, Wilfried; Pawlak, Bartek; Janssens, Tom; Brijs, Bert; Delhougne, Romain; Caymax, Matty; Loo, Roger (2004) -
Analysis of junctions formed in strained Si/SiGe substrates
Eneman, Geert; Simoen, Eddy; Lauwers, Anne; Lindsay, Richard; Verheyen, Peter; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Demuynck, Steven; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
Lee, Sumi; Ronchi, Nicolo; Bizindavyi, Jasper; Popovici, Mihaela Ioana; Banerjee, Kaustuv; Walke, Amey; Delhougne, Romain; Van Houdt, Jan; Shin, Changhwan (2023) -
Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth
Vandervorst, Wilfried; Janssens, Tom; Brijs, Bert; Delhougne, Romain; Loo, Roger; Caymax, Matty; Pawlak, Bartek; Posselt, Matthias (2005) -
Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
Belmonte, Attilio; Oh, Hyungrock; Rassoul, Nouredine; Donadio, Gabriele Luca; Mitard, Jerome; Dekkers, Harold; Delhougne, Romain; Subhechha, Subhali; Vaisman Chasin, Adrian; van Setten, Michiel; Kljucar, Luka; Mao, Ming; Puliyalil, Harinarayanan; Pak, Murat; Teugels, Lieve; Tsvetanova, Diana; Banerjee, Kaustuv; Souriau, Laurent; Tokei, Zsolt; Goux, Ludovic; Kar, Gouri Sankar (2020) -
Carbon-based liner for RESET current reduction in self-heating phase-change memory cells
De Proft, Anabel; Garbin, Daniele; Donadio, Gabriele Luca; Hody, Hubert; Witters, Thomas; Lodewijks, Kristof; Rottenberg, Xavier; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2020) -
Characteristics and integration of selectively grown strain-relaxed SiGe buffer layers
Caymax, Matty; Delhougne, Romain; Loo, Roger; Eneman, Geert; Verheyen, Peter (2005) -
Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures
Tang, Hongwei; Belmonte, Attilio; Lin, Dennis; Afanasiev, Valeri; Verdonck, Patrick; Vaisman Chasin, Adrian; Dekkers, Harold; Delhougne, Romain; Van Houdt, Jan; Kar, Gouri Sankar (2024) -
Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy
Wu, Zhicheng; Vaisman Chasin, Adrian; Franco, Jacopo; Subhechha, Subhali; Dekkers, Harold; Yengula Venkata Ramana, Bhuvaneshwari; Belmonte, Attilio; Rassoul, Nouredine; van Setten, Michiel; Afanas'ev, V.; Delhougne, Romain; Kaczer, Ben; Kar, Gouri Sankar (2022) -
Co active electrode enhances CBRAM performance and scaling potential
Belmonte, Attilio; Radhakrishnan, Janaki; Donadio, Gabriele Luca; Redolfi, Augusto; Delhougne, Romain; Nyns, Laura; Covello, Angelo; Vereecke, Guy; Franquet, Alexis; Spampinato, Valentina; Kundu, Shreya; Mao, Ming; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search
van Setten, Michiel; Dekkers, Harold; Pashartis, Christopher; Vaisman Chasin, Adrian; Belmonte, Attilio; Delhougne, Romain; Kar, Gouri Sankar; Pourtois, Geoffrey (2022) -
Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance
Garbin, Daniele; Devulder, Wouter; Degraeve, Robin; Donadio, Gabriele Luca; Clima, Sergiu; Opsomer, Karl; Fantini, Andrea; Cellier, Daniel; Kim, Wan Gee; Pakala, Mahendra; Cockburn, Andrew; Detavernier, Christophe; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility Transistors
Eneman, Geert; Simoen, Eddy; Delhougne, Romain; Gaubas, Eugenijus; Simons, Veerle; Roussel, Philippe; Verheyen, Peter; Lauwers, Anne; Loo, Roger; Vandervorst, Wilfried; De Meyer, Kristin; Claeys, Cor (2004)