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Low temperature source / drain epitaxy and functional silicides: essentials for ultimate contact scaling
dc.contributor.author | Porret, C. | |
dc.contributor.author | Everaert, J. L. | |
dc.contributor.author | Schaekers, M. | |
dc.contributor.author | Ragnarsson, L. A. | |
dc.contributor.author | Hikavyy, A. | |
dc.contributor.author | Rosseel, E. | |
dc.contributor.author | Rengo, G. | |
dc.contributor.author | Loo, R. | |
dc.contributor.author | Khazaka, R. | |
dc.contributor.author | Givens, M. | |
dc.contributor.author | Piao, X. | |
dc.contributor.author | Mertens, S. | |
dc.contributor.author | Heylen, N. | |
dc.contributor.author | Mertens, H. | |
dc.contributor.author | Cavalcante, C. Toledo de Carvalho | |
dc.contributor.author | Sterckx, G. | |
dc.contributor.author | Brus, S. | |
dc.contributor.author | Mehta, A. Nalin | |
dc.contributor.author | Korytov, M. | |
dc.contributor.author | Batuk, D. | |
dc.contributor.author | Favia, P. | |
dc.contributor.author | Langer, R. | |
dc.contributor.author | Pourtois, G. | |
dc.contributor.author | Swerts, J. | |
dc.contributor.author | Litta, E. Dentoni | |
dc.contributor.author | Horiguchi, N. | |
dc.date.accessioned | 2023-05-25T20:20:01Z | |
dc.date.available | 2023-05-25T20:20:01Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 2380-9248 | |
dc.identifier.other | WOS:000968800700157 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41621 | |
dc.source | WOS | |
dc.title | Low temperature source / drain epitaxy and functional silicides: essentials for ultimate contact scaling | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Porret, C. | |
dc.contributor.imecauthor | Everaert, J. L. | |
dc.contributor.imecauthor | Schaekers, M. | |
dc.contributor.imecauthor | Ragnarsson, L. A. | |
dc.contributor.imecauthor | Hikavyy, A. | |
dc.contributor.imecauthor | Rosseel, E. | |
dc.contributor.imecauthor | Rengo, G. | |
dc.contributor.imecauthor | Loo, R. | |
dc.contributor.imecauthor | Piao, X. | |
dc.contributor.imecauthor | Mertens, S. | |
dc.contributor.imecauthor | Heylen, N. | |
dc.contributor.imecauthor | Mertens, H. | |
dc.contributor.imecauthor | Cavalcante, C. Toledo de Carvalho | |
dc.contributor.imecauthor | Sterckx, G. | |
dc.contributor.imecauthor | Brus, S. | |
dc.contributor.imecauthor | Mehta, A. Nalin | |
dc.contributor.imecauthor | Korytov, M. | |
dc.contributor.imecauthor | Batuk, D. | |
dc.contributor.imecauthor | Favia, P. | |
dc.contributor.imecauthor | Langer, R. | |
dc.contributor.imecauthor | Pourtois, G. | |
dc.contributor.imecauthor | Swerts, J. | |
dc.contributor.imecauthor | Litta, E. Dentoni | |
dc.contributor.imecauthor | Horiguchi, N. | |
dc.identifier.doi | 10.1109/IEDM45625.2022.10019501 | |
dc.identifier.eisbn | 978-1-6654-8959-1 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.conference | International Electron Devices Meeting (IEDM) | |
dc.source.conferencedate | DEC 03-07, 2022 | |
dc.source.conferencelocation | San Francisco | |
imec.availability | Under review |
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