dc.contributor.author | Vermeersch, Bjorn | |
dc.contributor.author | Rodriguez, Raul | |
dc.contributor.author | Sibaja-Hernandez, Arturo | |
dc.contributor.author | Vais, Abhitosh | |
dc.contributor.author | Yadav, Sachin | |
dc.contributor.author | Parvais, Bertrand | |
dc.contributor.author | Collaert, Nadine | |
dc.date.accessioned | 2023-06-02T07:40:46Z | |
dc.date.available | 2023-05-25T20:20:01Z | |
dc.date.available | 2023-06-02T07:40:46Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 2380-9248 | |
dc.identifier.other | WOS:000968800700029 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41623.2 | |
dc.source | WOS | |
dc.title | Thermal Modelling of GaN & InP RF Devices with Intrinsic Account for Nanoscale Transport Effects | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Vermeersch, Bjorn | |
dc.contributor.imecauthor | Rodriguez, Raul | |
dc.contributor.imecauthor | Sibaja-Hernandez, Arturo | |
dc.contributor.imecauthor | Vais, Abhitosh | |
dc.contributor.imecauthor | Yadav, Sachin | |
dc.contributor.imecauthor | Parvais, Bertrand | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.orcidimec | Vermeersch, Bjorn::0000-0001-8640-672X | |
dc.contributor.orcidimec | Rodriguez, Raul::0000-0002-4457-8942 | |
dc.contributor.orcidimec | Vais, Abhitosh::0000-0002-0317-7720 | |
dc.contributor.orcidimec | Yadav, Sachin::0000-0003-4530-2603 | |
dc.contributor.orcidimec | Parvais, Bertrand::0000-0003-0769-7069 | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.identifier.doi | 10.1109/IEDM45625.2022.10019370 | |
dc.identifier.eisbn | 978-1-6654-8959-1 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.conference | International Electron Devices Meeting (IEDM) | |
dc.source.conferencedate | DEC 03-07, 2022 | |
dc.source.conferencelocation | San Francisco | |
dc.source.journal | na | |
imec.availability | Published - imec | |