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III-V/III-N technologies for next generation high-capacity wireless communication

dc.contributor.authorCollaert, N.
dc.contributor.authorAlian, A.
dc.contributor.authorBanerjee, A.
dc.contributor.authorBoccardi, G.
dc.contributor.authorCardinael, P.
dc.contributor.authorChauhan, V.
dc.contributor.authorDesset, C.
dc.contributor.authorElKashlan, R.
dc.contributor.authorKhaled, A.
dc.contributor.authorIngels, M.
dc.contributor.authorKunert, B.
dc.contributor.authorMols, Y.
dc.contributor.authorO'Sullivan, B.
dc.contributor.authorPeralagu, U.
dc.contributor.authorPinho, N.
dc.contributor.authorRodriguez, R.
dc.contributor.authorSibaja-Hernandez, A.
dc.contributor.authorSinha, S.
dc.contributor.authorSun, X.
dc.contributor.authorVais, A.
dc.contributor.authorVermeersch, B.
dc.contributor.authorYadav, S.
dc.contributor.authorYan, D.
dc.contributor.authorYu, H.
dc.contributor.authorZhang, Y.
dc.contributor.authorZhao, M.
dc.contributor.authorVan Driessche, J.
dc.contributor.authorGramegna, G.
dc.contributor.authorWambacq, P.
dc.contributor.authorParvais, B.
dc.contributor.authorPeeters, M.
dc.date.accessioned2023-05-25T20:20:02Z
dc.date.available2023-05-25T20:20:02Z
dc.date.issued2022
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000968800700211
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41625
dc.sourceWOS
dc.titleIII-V/III-N technologies for next generation high-capacity wireless communication
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, N.
dc.contributor.imecauthorAlian, A.
dc.contributor.imecauthorBanerjee, A.
dc.contributor.imecauthorBoccardi, G.
dc.contributor.imecauthorCardinael, P.
dc.contributor.imecauthorChauhan, V.
dc.contributor.imecauthorDesset, C.
dc.contributor.imecauthorElKashlan, R.
dc.contributor.imecauthorKhaled, A.
dc.contributor.imecauthorIngels, M.
dc.contributor.imecauthorKunert, B.
dc.contributor.imecauthorMols, Y.
dc.contributor.imecauthorO'Sullivan, B.
dc.contributor.imecauthorPeralagu, U.
dc.contributor.imecauthorPinho, N.
dc.contributor.imecauthorRodriguez, R.
dc.contributor.imecauthorSibaja-Hernandez, A.
dc.contributor.imecauthorSinha, S.
dc.contributor.imecauthorSun, X.
dc.contributor.imecauthorVais, A.
dc.contributor.imecauthorVermeersch, B.
dc.contributor.imecauthorYadav, S.
dc.contributor.imecauthorYan, D.
dc.contributor.imecauthorYu, H.
dc.contributor.imecauthorZhang, Y.
dc.contributor.imecauthorZhao, M.
dc.contributor.imecauthorVan Driessche, J.
dc.contributor.imecauthorGramegna, G.
dc.contributor.imecauthorWambacq, P.
dc.contributor.imecauthorParvais, B.
dc.contributor.imecauthorPeeters, M.
dc.identifier.doi10.1109/IEDM45625.2022.10019555
dc.identifier.eisbn978-1-6654-8959-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceInternational Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 03-07, 2022
dc.source.conferencelocationSan Francisco
imec.availabilityUnder review


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220.500.12860/41625.22023-06-16T09:54:47Zvalidation by library/open access desk
120.500.12860/41625*2023-05-25T20:20:02Z

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