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New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications

dc.contributor.authorAsanovski, R.
dc.contributor.authorGrill, Alexander
dc.contributor.authorFranco, Jacopo
dc.contributor.authorPalestri, P.
dc.contributor.authorBeckers, Arnout
dc.contributor.authorKaczer, Ben
dc.contributor.authorSelmi, L.
dc.date.accessioned2023-06-01T15:25:31Z
dc.date.available2023-05-25T20:20:42Z
dc.date.available2023-06-01T15:25:31Z
dc.date.issued2022
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000968800700046
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41637.2
dc.sourceWOS
dc.titleNew insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications
dc.typeProceedings paper
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorBeckers, Arnout
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecBeckers, Arnout::0000-0003-3663-0824
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.identifier.doi10.1109/IEDM45625.2022.10019388
dc.identifier.eisbn978-1-6654-8959-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceInternational Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 03-07, 2022
dc.source.conferencelocationSan Francisco
dc.source.journalna
imec.availabilityPublished - imec
dc.description.wosFundingTextThis work is funded in part by imec's Industrial Affiliation Program on Quantum Computing and Cryoelectronics. Furthermore, the internship leading to this work has been funded by the "Universita degli Studi di Modena e Reggio Emilia" through the "Bando giovani ricercatori 2021".


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220.500.12860/41637.2*2023-06-01T15:23:24Zvalidation by library/open access desk
120.500.12860/416372023-05-25T20:20:42Z

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