dc.contributor.author | Sangani, Dishant | |
dc.contributor.author | Diaz Fortuny, Javier | |
dc.contributor.author | Bury, Erik | |
dc.contributor.author | Kaczer, Ben | |
dc.contributor.author | Gielen, G. | |
dc.date.accessioned | 2023-06-01T12:17:58Z | |
dc.date.available | 2023-05-26T19:52:18Z | |
dc.date.available | 2023-06-01T12:17:58Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 1930-8841 | |
dc.identifier.other | WOS:000972934500015 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41648.2 | |
dc.source | WOS | |
dc.title | Assessment of Transistor Aging Models in a 28nm CMOS Technology at a Wide Range of Stress Conditions | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Sangani, Dishant | |
dc.contributor.imecauthor | Diaz Fortuny, Javier | |
dc.contributor.imecauthor | Bury, Erik | |
dc.contributor.imecauthor | Kaczer, Ben | |
dc.contributor.orcidimec | Diaz Fortuny, Javier::0000-0002-8186-071X | |
dc.contributor.orcidimec | Bury, Erik::0000-0002-5847-3949 | |
dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
dc.identifier.doi | 10.1109/IIRW56459.2022.10032756 | |
dc.identifier.eisbn | 978-1-6654-5368-4 | |
dc.source.numberofpages | 6 | |
dc.source.peerreview | yes | |
dc.source.conference | IEEE International Integrated Reliability Workshop (IIRW) | |
dc.source.conferencedate | OCT 09-14, 2022 | |
dc.source.conferencelocation | South Lake Tahoe | |
dc.source.journal | na | |
imec.availability | Published - imec | |