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200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

dc.contributor.authorCosnier, Thibault
dc.contributor.authorSyshchyk, Olga
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorGeens, Karen
dc.contributor.authorCingu, Deepthi
dc.contributor.authorFabris, Elena
dc.contributor.authorBorga, Matteo
dc.contributor.authorVohra, Anurag
dc.contributor.authorZhao, Ming
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorWellekens, Dirk
dc.contributor.authorMagnani, Alessandro
dc.contributor.authorVudumula, Pavan
dc.contributor.authorChatterjee, Urmimala
dc.contributor.authorLanger, Robert
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2023-08-10T09:48:52Z
dc.date.available2023-06-20T10:33:51Z
dc.date.available2023-08-10T09:48:52Z
dc.date.issued2021
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000812325400093
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41826.2
dc.sourceWOS
dc.title200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
dc.typeProceedings paper
dc.contributor.imecauthorCosnier, Thibault
dc.contributor.imecauthorSyshchyk, Olga
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorCingu, Deepthi
dc.contributor.imecauthorFabris, Elena
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorMagnani, Alessandro
dc.contributor.imecauthorVudumula, Pavan
dc.contributor.imecauthorChatterjee, Urmimala
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecSyshchyk, O.::0000-0001-8110-3754
dc.contributor.orcidimecCingu, D.::0000-0002-3042-7289
dc.contributor.orcidimecFabris, Elena::0000-0003-1345-5111
dc.contributor.orcidimecCosnier, Thibault::0000-0001-7991-7222
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecMagnani, Alessandro::0000-0001-6719-7467
dc.contributor.orcidimecVudumula, Pavan::0000-0002-5207-7363
dc.contributor.orcidimecChatterjee, Urmimala::0000-0002-8934-6774
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.identifier.doi10.1109/IEDM19574.2021.9720591
dc.identifier.eisbn978-1-6654-2572-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/41826.2*2023-08-10T09:42:45Zvalidation by library/open access desk
120.500.12860/418262023-06-20T10:33:51Z

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