Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-chi Block Copolymers

Abstract

Directed self-assembly of block copolymers (BCP) is a very attractive technique for the realization of functional nanostructures at high resolution. In this work, we developed full dry-etching strategies for BCP nanolithography using an 18 nm pitch lamellar silicon- containing block copolymer. Both an oxidizing Ar/O-2 plasma and a nonoxidizing H-2/N-2 plasma are used to remove the topcoat material of our BCP stack and reveal the perpendicular lamellae. Under Ar/O-2 plasma, an interfacial layer stops the etch process at the topcoat/BCP interface, which provides an etch-stop but also requires an additional CF4-based breakthrough plasma for further etching. This interfacial layer is not present in H-2/N-2. Increasing the H-2/N-2 ratio leads to more profound modifications of the silicon-containing lamellae, for which a chemistry in He/N-2/O-2 rather than Ar/O-2 plasma produces a smoother and more regular lithographic mask. Finally, these features are successfully transferred into silicon, silicon-on-insulator, and silicon nitride substrates. This work highlights the performance of a silicon-containing block copolymer at 18 nm pitch to pattern relevant hard-mask materials for various applications, including microelectronics.