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Cluster formation during annealing of ultra-low-energy boron-implanted silicon

dc.contributor.authorCollart, E. J. H.
dc.contributor.authorMurrell, A. J.
dc.contributor.authorFoad, M. A.
dc.contributor.authorvan den Berg, J. A.
dc.contributor.authorZhang, S.
dc.contributor.authorArmour, D.
dc.contributor.authorGoldberg, R. D.
dc.contributor.authorWang, T. S.
dc.contributor.authorCullis, A. G.
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T12:44:51Z
dc.date.available2021-10-14T12:44:51Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4206
dc.sourceIIOimport
dc.titleCluster formation during annealing of ultra-low-energy boron-implanted silicon
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage435
dc.source.endpage439
dc.source.journalJ. Vacuum Science and Technology B
dc.source.issue1
dc.source.volumeB18
imec.availabilityPublished - open access
imec.internalnotesPapers from the 5th International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles; 1999


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