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Influence of pre and post process conditions on the composition of thin Si3N4 thin films (3nm) studied by XPS and TOFSIMS

dc.contributor.authorConard, Thierry
dc.contributor.authorDe Witte, Hilde
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoussa, Michel
dc.contributor.authorHeyns, Marc
dc.contributor.authorPomarede, C.
dc.contributor.authorWerkhoven, Chris
dc.date.accessioned2021-10-14T12:45:36Z
dc.date.available2021-10-14T12:45:36Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4217
dc.sourceIIOimport
dc.titleInfluence of pre and post process conditions on the composition of thin Si3N4 thin films (3nm) studied by XPS and TOFSIMS
dc.typeProceedings paper
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage69
dc.source.endpage74
dc.source.conferenceStructure and Electronic Properties of Ultrathin Dielectrics on Silicon and Related Structures; November 1999; Boston, MA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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