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Impact of nitridation of SiO2 gate oxide on 1/f noise in 0.18μm CMOS

dc.contributor.authorDa Rold, Martina
dc.contributor.authorSimoen, Eddy
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-14T12:46:29Z
dc.date.available2021-10-14T12:46:29Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4230
dc.sourceIIOimport
dc.titleImpact of nitridation of SiO2 gate oxide on 1/f noise in 0.18μm CMOS
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage512
dc.source.endpage515
dc.source.conferenceProceedings of the 30th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/2000
dc.source.conferencelocationCork Ireland
imec.availabilityPublished - imec


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