dc.contributor.author | Thakare, Devesh | |
dc.contributor.author | Wu, Meiyi | |
dc.contributor.author | Opsomer, Karl | |
dc.contributor.author | Saadeh, Qais | |
dc.contributor.author | Soltwisch, Victor | |
dc.contributor.author | Naujok, Philipp | |
dc.contributor.author | Detavernier, Christophe | |
dc.contributor.author | Dattilo, Davide | |
dc.contributor.author | Foltin, Markus | |
dc.contributor.author | Goodyear, Andy | |
dc.contributor.author | Cooke, Mike | |
dc.contributor.author | Delabie, Annelies | |
dc.contributor.author | Philipsen, Vicky | |
dc.date.accessioned | 2024-03-12T09:50:42Z | |
dc.date.available | 2023-08-27T17:28:50Z | |
dc.date.available | 2024-03-12T09:50:42Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 1932-5150 | |
dc.identifier.other | WOS:001046441600010 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/42412.3 | |
dc.source | WOS | |
dc.title | Evaluation of Ta-Co alloys as novel high-k extreme ultraviolet mask absorber | |
dc.type | Journal article | |
dc.contributor.imecauthor | Thakare, Devesh | |
dc.contributor.imecauthor | Wu, Meiyi | |
dc.contributor.imecauthor | Opsomer, Karl | |
dc.contributor.imecauthor | Delabie, Annelies | |
dc.contributor.imecauthor | Philipsen, Vicky | |
dc.contributor.orcidimec | Thakare, Devesh::0000-0003-3265-7042 | |
dc.contributor.orcidimec | Delabie, Annelies::0000-0001-9739-7419 | |
dc.contributor.orcidimec | Philipsen, Vicky::0000-0002-2959-432X | |
dc.identifier.doi | 10.1117/1.JMM.22.2.024403 | |
dc.source.numberofpages | 23 | |
dc.source.peerreview | yes | |
dc.source.beginpage | Art. 024403 | |
dc.source.endpage | N/A | |
dc.source.journal | JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3 | |
dc.source.issue | 2 | |
dc.source.volume | 22 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | The authors acknowledge that this project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking (Grant No.& nbsp;783247 - TAPES3) (Technology Advances for Pilot line of Enhanced Semiconductors for 3 & nbsp;nm). This Joint Undertaking receives support from the European Union's Horizon 2020 research and innovation program alongside the Netherlands, Belgium, Germany, France, Austria, United Kingdom, Israel, and Switzerland. The authors would like to thank the Materials and Component Analysis (MCA) department at imec for material characterizations and Ivan Pollentier (imec) for hydrogen stability experiments. Finally, we thank Synopsys for supporting us with the S-Litho EUV simulation tool. The authors have no conflicts of interest to declare. | |