Microplasma Illumination Enhancement in N plus P-Co-Ion-Implanted Nanocrystalline Diamond Films

Abstract

N- and P-co-ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm(-1) and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm(-2) (@510 V) with plasma life-time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond-to-Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.