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A mechanism for the silicon oxide growth by ozonated solutions

dc.contributor.authorDe Smedt, Frank
dc.contributor.authorVinckier, Chris
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCornelissen, Ingrid
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T12:49:33Z
dc.date.available2021-10-14T12:49:33Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4274
dc.sourceIIOimport
dc.titleA mechanism for the silicon oxide growth by ozonated solutions
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCornelissen, Ingrid
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage407
dc.source.endpage415
dc.source.conferenceCleaning Technology in Semiconductor Device Manufacturing. Proceedings of the 6th International Symposium
dc.source.conferencedate17/10/1999
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 99-36


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