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On the electrical activity of oxygen-related extended defects in silicon

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorBosman, Gijs
dc.contributor.authorClaeys, Cor
dc.contributor.authorKaniava, Arvydas
dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorBlondeel, A.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T12:51:27Z
dc.date.available2021-09-29T12:51:27Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/428
dc.sourceIIOimport
dc.titleOn the electrical activity of oxygen-related extended defects in silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage670
dc.source.endpage683
dc.source.conferenceProceedings of the 7th International Symposium on Silicon Materials Science and Technology - Semiconductor Silicon/1994
dc.source.conferencedate22/05/1994
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 94-10


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