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A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components

dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorVleugels, Frank
dc.contributor.authorKuhn, Rudiger
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorJenei, Snezana
dc.contributor.authorCroon, Jeroen
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorDa Rold, Martina
dc.contributor.authorRosseel, Erik
dc.contributor.authorChevalier, P.
dc.contributor.authorCoppens, P.
dc.date.accessioned2021-10-14T12:51:21Z
dc.date.available2021-10-14T12:51:21Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4297
dc.sourceIIOimport
dc.titleA 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVleugels, Frank
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorRosseel, Erik
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage106
dc.source.endpage109
dc.source.conferenceProceedings Bipolar/BiCMOS Circuits and Technology Meeting - BCTM
dc.source.conferencedate24/09/2000
dc.source.conferencelocationMinneapolis, MN USA
imec.availabilityPublished - imec


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