Magnetic Domain Wall Memory: A DTCO study for Memory Applications

Abstract

Domain Wall-based magnetic random-access memory (DW-MRAM) offers the possibility to realize ultra-high storage density with non-volatile memory technology. In this work, we perform a Power Performance and Area (PPA) analysis of DW-MRAM using Design Technology Co-optimization (DTCO) for embedded and standalone memory applications. Our analysis shows that, in the embedded domain, area benefit can be achieved for as few as 3 bits/DW track but at the cost of degraded performance and increased energy (>10x higher). On the other hand, DW-MRAM can be a strong competitor in the standalone domain with 512 bits/DW track where it outperforms FLASH, even with serial access. Therefore, DW-MRAM can be a viable memory technology for the stand-alone storage class memory domain.