Solutions To Improve HBM ESD Robustness of GaN RF HEMTs

Abstract

Gallium Nitride (GaN) high electron mobility transistors (HEMT) exhibit 3 different types of HBM failures, namely, reverse Schottky electric field (REF) failure, 2DEG channel constant power (CP) failure and forward Schottky current crowding (CC) failure. HBM robustness of each failure can be improved by similar to 75% to similar to 200% by increasing the gate-ohmic spacing or by increasing device width. Increasing field plate length increases HBM robustness against REF by similar to 50%. Similarly using a back barrier helps increase HBM robustness against CP failure by similar to 60%.