dc.contributor.author | Schanovsky, F. | |
dc.contributor.author | Verreck, Devin | |
dc.contributor.author | Stanojevic, Z. | |
dc.contributor.author | Schallert, S. | |
dc.contributor.author | Arreghini, Antonio | |
dc.contributor.author | Van den Bosch, Geert | |
dc.contributor.author | Rosmeulen, Maarten | |
dc.contributor.author | Karner, M. | |
dc.date.accessioned | 2024-02-26T13:29:28Z | |
dc.date.available | 2024-01-07T17:44:24Z | |
dc.date.available | 2024-02-26T13:29:28Z | |
dc.date.issued | 2024 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:001129749200001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/43341.2 | |
dc.source | WOS | |
dc.title | Modeling the Operation of Charge Trap Flash Memory–Part I: The Importance of Carrier Energy Relaxation | |
dc.type | Journal article | |
dc.contributor.imecauthor | Verreck, Devin | |
dc.contributor.imecauthor | Arreghini, Antonio | |
dc.contributor.imecauthor | Van den Bosch, Geert | |
dc.contributor.imecauthor | Rosmeulen, Maarten | |
dc.contributor.orcidimec | Verreck, Devin::0000-0002-3833-5880 | |
dc.contributor.orcidimec | Arreghini, Antonio::0000-0002-7493-9681 | |
dc.contributor.orcidimec | Van den Bosch, Geert::0000-0001-9971-6954 | |
dc.contributor.orcidimec | Rosmeulen, Maarten::0000-0002-3663-7439 | |
dc.date.embargo | 2023-12-18 | |
dc.identifier.doi | 10.1109/TED.2023.3339076 | |
dc.source.numberofpages | 7 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 547 | |
dc.source.endpage | 553 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 1 | |
dc.source.volume | 71 | |
imec.availability | Published - open access | |