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Epitaxial CoSi2 formation by a Cr or Mo interlayer

dc.contributor.authorDetavernier, C.
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorCardon, F.
dc.contributor.authorMaex, Karen
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T12:54:54Z
dc.date.available2021-10-14T12:54:54Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4340
dc.sourceIIOimport
dc.titleEpitaxial CoSi2 formation by a Cr or Mo interlayer
dc.typeProceedings paper
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageC10.2
dc.source.conferenceGate Stack and Silicide Issues in Silicon Processing
dc.source.conferencelocation
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 611


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