dc.contributor.author | Zidan, Mohamed | |
dc.contributor.author | Lorusso, Gian | |
dc.contributor.author | De Simone, Danilo | |
dc.contributor.author | De Silva, Anuja | |
dc.contributor.author | Haider, Ali | |
dc.contributor.author | Verveniotis, Elisseos | |
dc.contributor.author | Moussa, Alain | |
dc.contributor.author | De Gendt, Stefan | |
dc.date.accessioned | 2024-04-18T14:15:57Z | |
dc.date.available | 2024-04-18T14:15:57Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 1932-5150 | |
dc.identifier.other | WOS:001134890300016 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/43851 | |
dc.source | WOS | |
dc.title | E-beam metrology and line local critical dimension uniformity of thin dry resist films for high numerical aperture extreme ultraviolet lithography | |
dc.type | Journal article | |
dc.contributor.imecauthor | Zidan, Mohamed | |
dc.contributor.imecauthor | De Simone, Danilo | |
dc.contributor.imecauthor | Moussa, Alain | |
dc.contributor.imecauthor | De Gendt, Stefan | |
dc.contributor.imecauthor | Lorusso, Gian | |
dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
dc.contributor.orcidimec | De Simone, Danilo::0000-0003-3927-5207 | |
dc.contributor.orcidimec | Moussa, Alain::0000-0002-6377-4199 | |
dc.contributor.orcidimec | Lorusso, Gian::0000-0003-3498-5082 | |
dc.date.embargo | 2023-11-30 | |
dc.identifier.doi | 10.1117/1.JMM.22.4.044001 | |
dc.source.numberofpages | 11 | |
dc.source.peerreview | yes | |
dc.source.beginpage | Art. 044001 | |
dc.source.endpage | N/A | |
dc.source.journal | JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3 | |
dc.source.issue | 4 | |
dc.source.volume | 22 | |
imec.availability | Published - open access | |
dc.description.wosFundingText | Part of this manuscript has been previously published in the SPIE Conference Proceedings: Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 1249612 (27 April 2023) 10.1117/12.2658280.13 We would like to acknowledge Joern-Holger Franke from imec for the fruitful discussion and calculating the NILS values. | |