Show simple item record

Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering

dc.contributor.authorBorga, Matteo
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVohra, Anurag
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2025-05-07T09:15:30Z
dc.date.available2024-04-26T18:05:31Z
dc.date.available2025-05-07T09:15:30Z
dc.date.issued2024
dc.identifier.issn1862-6300
dc.identifier.otherWOS:001205653000001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43882.2
dc.sourceWOS
dc.titleEnhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering
dc.typeJournal article
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.identifier.doi10.1002/pssa.202400043
dc.source.numberofpages8
dc.source.peerreviewyes
dc.source.beginpageArt. 2400043
dc.source.endpageN/A
dc.source.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.source.issue21
dc.source.volume221
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record

Version history

VersionItemDateSummary
220.500.12860/43882.2*2025-05-07T09:13:29Zvalidation by library/open access desk
120.500.12860/438822024-04-26T18:05:31Z

*Selected version