Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering

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Authors
Borga, Matteo; Posthuma, Niels; Vohra, Anurag; Bakeroot, Benoit; Decoutere, Stefaan
DOI
10.1002/pssa.202400043
ISSN
1862-6300
Issue
21
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume
221
Title
Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering
Publication type
Journal article
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220.500.12860/43882.2*2025-05-07T09:13:29Zvalidation by library/open access desk
120.500.12860/438822024-04-26T18:05:31Z

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