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Impact of temperature and breakdown statistics on reliability predictions for ultra-thin oxides

dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-14T13:01:31Z
dc.date.available2021-10-14T13:01:31Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4405
dc.sourceIIOimport
dc.titleImpact of temperature and breakdown statistics on reliability predictions for ultra-thin oxides
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage295
dc.source.endpage306
dc.source.conferenceStructure and Electronic Properties of Ultrathin Dielectrics on Silicon and Related Structures; November 1999; Boston, MA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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