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dc.contributor.authorErofeev, Ivan
dc.contributor.authorHartanto, Antony Winata
dc.contributor.authorSaidov, Khakimjon
dc.contributor.authorAabdin, Zainul
dc.contributor.authorPacco, Antoine
dc.contributor.authorPhilipsen, Harold
dc.contributor.authorTjiu, Weng Weei
dc.contributor.authorHui, Hui Kim
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorMirsaidov, Utkur
dc.date.accessioned2024-09-23T13:55:56Z
dc.date.available2024-07-04T18:38:12Z
dc.date.available2024-09-23T13:55:56Z
dc.date.issued2024
dc.identifier.issn2199-160X
dc.identifier.otherWOS:001253872900001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44116.2
dc.sourceWOS
dc.titleSolving the Annealing of Mo Interconnects for Next-Gen Integrated Circuits
dc.typeJournal article
dc.contributor.imecauthorPacco, Antoine
dc.contributor.imecauthorPhilipsen, Harold
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecPacco, Antoine::0000-0001-6330-5053
dc.contributor.orcidimecPhilipsen, Harold::0000-0002-5029-1104
dc.contributor.orcidimecHolsteyns, Frank::0009-0002-2123-452X
dc.date.embargo2024-06-24
dc.identifier.doi10.1002/aelm.202400035
dc.source.numberofpages7
dc.source.peerreviewyes
dc.source.beginpageArt. 2400035
dc.source.endpageN/A
dc.source.journalADVANCED ELECTRONIC MATERIALS
dc.source.issue9
dc.source.volume10
imec.availabilityPublished - open access
dc.description.wosFundingTextThis work was supported by the Singapore National Research Foundation's Competitive Research Program funding (NRF-CRP23-2019-0001).


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