Show simple item record

Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

dc.contributor.authorHoussa, Michel
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorStesmans, Andre
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T13:04:32Z
dc.date.available2021-10-14T13:04:32Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4433
dc.sourceIIOimport
dc.titleVariation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1885
dc.source.endpage1887
dc.source.journalApplied Physics Letters
dc.source.issue12
dc.source.volume77
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
4426.pdf
Size:
53.76Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record