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Electrical properties of metal-insulator-semiconductor devices with high permittivity gate dielectric layers

dc.contributor.authorHoussa, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHeyns, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorNaili, Mohamed
dc.contributor.authorMertens, Paul
dc.contributor.authorStesmans, Andre
dc.contributor.authorJeon, J. S.
dc.contributor.authorHalliyal, A.
dc.date.accessioned2021-10-14T13:04:40Z
dc.date.available2021-10-14T13:04:40Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4434
dc.sourceIIOimport
dc.titleElectrical properties of metal-insulator-semiconductor devices with high permittivity gate dielectric layers
dc.typeOral presentation
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewno
dc.source.conferenceSemicon Europe
dc.source.conferencedate4/04/2000
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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