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Electrical properties of MIS devices with high permittivity gate dielectric layers

dc.contributor.authorHoussa, Michel
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-14T13:04:53Z
dc.date.available2021-10-14T13:04:53Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4436
dc.sourceIIOimport
dc.titleElectrical properties of MIS devices with high permittivity gate dielectric layers
dc.typeProceedings paper
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage1
dc.source.endpage20
dc.source.conferenceProceedings of the 1999 SMART/SUPERMAT NATO Workshop;
dc.source.conferencelocation
imec.availabilityPublished - imec


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