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Charge trapping in very thin high-permittivity gate dielectric layers

dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.authorNaili, Mohamed
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T13:05:08Z
dc.date.available2021-10-14T13:05:08Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4438
dc.sourceIIOimport
dc.titleCharge trapping in very thin high-permittivity gate dielectric layers
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1381
dc.source.endpage1383
dc.source.journalApplied Physics Letters
dc.source.issue9
dc.source.volume77
imec.availabilityPublished - open access


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