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Build-up of the altered layer as function of the ion-fluency in Si-Ge

dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T13:05:27Z
dc.date.available2021-10-14T13:05:27Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4441
dc.sourceIIOimport
dc.titleBuild-up of the altered layer as function of the ion-fluency in Si-Ge
dc.typeOral presentation
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.source.peerreviewno
dc.source.conferenceSIMS-Europe
dc.source.conferencedate18/09/2000
dc.source.conferencelocationMünster Germany
imec.availabilityPublished - imec


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