Soft and Hard Error-Correction Techniques in STT-MRAM

Abstract

Editor ’s notes: Spin-transfer torque magnetic random-access memory (STT-MRAM) has emerged as a promising alternative to conventional CMOS memory technologies. This article presents a detailed overview of state-of-the-art techniques to enhance STT-MRAM reliability. —Partha Pratim Pande, Washington State University, USA