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Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon

dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorStalmans, Lieven
dc.contributor.authorBilyalov, Renat
dc.contributor.authorPoortmans, Jef
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T13:07:07Z
dc.date.available2021-10-14T13:07:07Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4456
dc.sourceIIOimport
dc.titleTransmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage119
dc.source.endpage127
dc.source.journalJournal of Crystal Growth
dc.source.issue1_2
dc.source.volume212
imec.availabilityPublished - open access


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