Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM

Abstract

This paper presents a physics-based compact model for Voltage-Controlled Magnetic Anisotropy (VCMA) MRAM, calibrated against fabricated devices. Our model addresses inherent stochasticity, offering a robust tool for the design and simulation of VCMA MRAM peripheral circuits. Achieving a tenfold increase in simulation speed compared to existing stochastic Landau-Lifshitz-Gilbert-Slonczewski (sLLGS) based models (10x to 100x), and overcoming accuracy problems related to VCMA macro-spin sLLGS simulations, our approach enables efficient exploration of MRAM based circuits. The model efficiency and accuracy are demonstrated through a practical use case.