Towards Low Contact Resistance Metal Transition-Metal Dichalcogenide Contacts - A Quantum Transport Study

Abstract

In this study, we use Non-Equilibrium Green's Function (NEGF) based quantum transport simulations to investigate metal-Transition Metal Dichalcogenide (TMD) top contacted geometries. Using MoS2 as an example TMD, we explore the impact of the surrounding dielectric environment and spatially non-uniform doping in MoS2 on contact resistance. We find that a low permittivity top dielectric is crucial in reducing the tunneling width for electrons and thus contact resistance. We also find that heavily doping the MoS2 monolayer underneath the metal has an insignificant effect in terms of reducing the tunneling width and contact resistance whereas the doping in the channel region is critical.