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Characterization of WF6/N2/H2 plasma enhanced chemical vapor deposited WxN films as barriers for Cu metallization

dc.contributor.authorLi, Hua
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorLanckmans, Filip
dc.contributor.authorHeyvaert, Ilse
dc.contributor.authorMaex, Karen
dc.contributor.authorFroyen, L.
dc.date.accessioned2021-10-14T13:15:51Z
dc.date.available2021-10-14T13:15:51Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4528
dc.sourceIIOimport
dc.titleCharacterization of WF6/N2/H2 plasma enhanced chemical vapor deposited WxN films as barriers for Cu metallization
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHeyvaert, Ilse
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage242
dc.source.endpage251
dc.source.journalJ. Vacuum Science and Technology B
dc.source.issue1
dc.source.volumeB18
imec.availabilityPublished - open access


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