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Silicide induced mechanical stress in Si: what are the consequences for MOS technology

dc.contributor.authorMaex, Karen
dc.contributor.authorSteegen, An
dc.date.accessioned2021-10-14T13:19:00Z
dc.date.available2021-10-14T13:19:00Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4553
dc.sourceIIOimport
dc.titleSilicide induced mechanical stress in Si: what are the consequences for MOS technology
dc.typeProceedings paper
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage143
dc.source.endpage149
dc.source.conferenceThin Films - Stresses and Mechanical Properties VIII
dc.source.conferencedate29/11/1999
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 594


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