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Influence of boron implantation dose on the mechanical stress in polycrystalline silicon films

dc.contributor.authorNakabayashi, M.
dc.contributor.authorIkegami, M.
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorKobauashi, K.
dc.contributor.authorYoneoka, M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorTakami, Y.
dc.contributor.authorSunaga, H.
dc.contributor.authorTakizawa, H.
dc.date.accessioned2021-10-14T13:26:09Z
dc.date.available2021-10-14T13:26:09Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4605
dc.sourceIIOimport
dc.titleInfluence of boron implantation dose on the mechanical stress in polycrystalline silicon films
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage85
dc.source.endpage88
dc.source.conference3rd International Conference Materials for Microelectronics
dc.source.conferencedate16/10/2000
dc.source.conferencelocationDublin Ireland
imec.availabilityPublished - open access


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