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The Influence of Dopants on the Leakage Current in PZT Thin-Film Electroceramic Capacitors

dc.contributor.authorWouters, D.
dc.contributor.authorWillems, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorBrooks, K.
dc.contributor.authorKlissurska, R.
dc.date.accessioned2021-09-29T12:53:39Z
dc.date.available2021-09-29T12:53:39Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/465
dc.sourceIIOimport
dc.titleThe Influence of Dopants on the Leakage Current in PZT Thin-Film Electroceramic Capacitors
dc.typeOral presentation
dc.contributor.imecauthorWillems, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecWillems, Geert::0000-0002-9137-618X
dc.source.peerreviewno
dc.source.conferenceNATO Advanced Research Workshop on Science and Technology of Ferroelectric Thin Films; June 20-24, 1994; Aquafredda di Maratea,
imec.availabilityPublished - imec


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