Show simple item record

Lifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well

dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRooyackers, Rita
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorGaubas, Eugenijus
dc.date.accessioned2021-10-14T13:36:29Z
dc.date.available2021-10-14T13:36:29Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4676
dc.sourceIIOimport
dc.titleLifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage403
dc.source.endpage413
dc.source.conferenceHigh Purity Silicon VI
dc.source.conferencedate22/10/2000
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2000-17 / Proceedings of SPIE; Vol. 4218


Files in this item

Thumbnail
Name:
4673.pdf
Size:
544.7Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record