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Tin doping effects in silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V. B.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKras'ko, M.
dc.contributor.authorPuzenko, O.
dc.contributor.authorBlondeel, A.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-14T13:47:21Z
dc.date.available2021-10-14T13:47:21Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4749
dc.sourceIIOimport
dc.titleTin doping effects in silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage223
dc.source.endpage235
dc.source.conferenceHigh Purity Silicon VI
dc.source.conferencedate22/10/2000
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - open access
imec.internalnotesECS Proceedings; Vol. 2000-17 / Spie Proceedings; Vol. 4218


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