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dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V. B.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKras'ko, M.
dc.contributor.authorPuzenko, O.
dc.contributor.authorBlondeel, A.
dc.contributor.authorClauws, P.
dc.contributor.authorKoops, G.E.J.
dc.contributor.authorPattyn, H.
dc.date.accessioned2021-10-14T13:47:42Z
dc.date.available2021-10-14T13:47:42Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4751
dc.sourceIIOimport
dc.titleTin-related deep levels in proton-irradiated n-type silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage156
dc.source.conferenceProceedings 2nd ENDEASD Workshop
dc.source.conferencedate27/06/2000
dc.source.conferencelocationStockholm Sweden
imec.availabilityPublished - open access


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