Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
dc.contributor.author | Stafford, A. | |
dc.contributor.author | Irvine, S. J. C. | |
dc.contributor.author | Bougrioua, Zahia | |
dc.contributor.author | Jacobs, Koen | |
dc.contributor.author | Moerman, Ingrid | |
dc.contributor.author | Thrush, E. J. | |
dc.contributor.author | Considine, L. | |
dc.date.accessioned | 2021-10-14T13:49:51Z | |
dc.date.available | 2021-10-14T13:49:51Z | |
dc.date.issued | 2000 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4765 | |
dc.source | IIOimport | |
dc.title | Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry | |
dc.type | Journal article | |
dc.contributor.imecauthor | Moerman, Ingrid | |
dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 142 | |
dc.source.endpage | 148 | |
dc.source.journal | J. Crystal Growth | |
dc.source.volume | 221 | |
imec.availability | Published - open access |