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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

dc.contributor.authorStafford, A.
dc.contributor.authorIrvine, S. J. C.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorThrush, E. J.
dc.contributor.authorConsidine, L.
dc.date.accessioned2021-10-14T13:49:51Z
dc.date.available2021-10-14T13:49:51Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4765
dc.sourceIIOimport
dc.titleQuantifying the smoothing of GaN epilayer growth by in situ laser interferometry
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage142
dc.source.endpage148
dc.source.journalJ. Crystal Growth
dc.source.volume221
imec.availabilityPublished - open access


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