dc.contributor.author | Stafford, A. | |
dc.contributor.author | Irvine, S. J. C. | |
dc.contributor.author | Bougrioua, Zahia | |
dc.contributor.author | Jacobs, Koen | |
dc.contributor.author | Moerman, Ingrid | |
dc.contributor.author | Thrush, E. J. | |
dc.contributor.author | Considine, L. | |
dc.contributor.author | Crawley., J. | |
dc.date.accessioned | 2021-10-14T13:50:01Z | |
dc.date.available | 2021-10-14T13:50:01Z | |
dc.date.issued | 2000 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4766 | |
dc.source | IIOimport | |
dc.title | Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Moerman, Ingrid | |
dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 84 | |
dc.source.endpage | 85 | |
dc.source.conference | 10th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE-X; 5-9 June 2000; Sapporo, Japan. | |
dc.source.conferencelocation | | |
imec.availability | Published - open access | |