Show simple item record

Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry

dc.contributor.authorStafford, A.
dc.contributor.authorIrvine, S. J. C.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorThrush, E. J.
dc.contributor.authorConsidine, L.
dc.contributor.authorCrawley., J.
dc.date.accessioned2021-10-14T13:50:01Z
dc.date.available2021-10-14T13:50:01Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4766
dc.sourceIIOimport
dc.titleQuantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage84
dc.source.endpage85
dc.source.conference10th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE-X; 5-9 June 2000; Sapporo, Japan.
dc.source.conferencelocation
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
4767.pdf
Size:
543.1Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record