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Control of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts

dc.contributor.authorVan Roy, Wim
dc.contributor.authorRoelfsema, R. F. B.
dc.contributor.authorLiu, Zhiyu
dc.contributor.authorAkinaga, Hiroyuki
dc.contributor.authorMiyanishi, S.
dc.contributor.authorManago, T.
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorDe Boeck, Jo
dc.date.accessioned2021-10-14T14:04:03Z
dc.date.available2021-10-14T14:04:03Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4853
dc.sourceIIOimport
dc.titleControl of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts
dc.typeOral presentation
dc.contributor.imecauthorVan Roy, Wim
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.orcidimecVan Roy, Wim::0000-0003-3232-1987
dc.source.peerreviewno
dc.source.conference11th International Conference on Molecular Beam Epitaxy - MBE-XI; 10-15 September 2000; Beijing, China.
dc.source.conferencelocation
imec.availabilityPublished - imec


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