dc.contributor.author | Vantomme, Andre | |
dc.contributor.author | Wu, Ming Fang | |
dc.contributor.author | Hogg, S. | |
dc.contributor.author | Langouche, G. | |
dc.contributor.author | Jacobs, Koen | |
dc.contributor.author | Moerman, Ingrid | |
dc.contributor.author | White, M. E. | |
dc.contributor.author | O'Donnell, K. P. | |
dc.contributor.author | Nistor, Leona | |
dc.contributor.author | Van Landuyt, J. | |
dc.contributor.author | Bender, Hugo | |
dc.date.accessioned | 2021-10-14T14:12:00Z | |
dc.date.available | 2021-10-14T14:12:00Z | |
dc.date.issued | 2000 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4900 | |
dc.source | IIOimport | |
dc.title | Comparative study of structural properties and photoluminescence in InGaN layers with a high In content | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Vantomme, Andre | |
dc.contributor.imecauthor | Moerman, Ingrid | |
dc.contributor.imecauthor | Bender, Hugo | |
dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | W11.38.1 | |
dc.source.conference | GaN and Related Alloys - 1999 | |
dc.source.conferencedate | 29/11/1999 | |
dc.source.conferencelocation | Boston, MA USA | |
imec.availability | Published - open access | |
imec.internalnotes | MRS Symposium Proceedings; Vol. 595 | |