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dc.contributor.authorVantomme, Andre
dc.contributor.authorWu, Ming Fang
dc.contributor.authorHogg, S.
dc.contributor.authorLangouche, G.
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorWhite, M. E.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorNistor, Leona
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-14T14:12:12Z
dc.date.available2021-10-14T14:12:12Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4901
dc.sourceIIOimport
dc.titleComparative study of structural properties and photoluminescence in InGaN layers with a high In content
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageW11.38
dc.source.journalMRS Internet Journal of Nitride Semiconductor Research
dc.source.volume5, Suppl. 1
dc.identifier.urlhttp://nsr.mij.mrs.org/5S1/W11.38/
imec.availabilityPublished - open access


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