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Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
Publication:
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
Date
2000
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vantomme, Andre
;
Wu, Ming Fang
;
Hogg, S.
;
Langouche, G.
;
Jacobs, Koen
;
Moerman, Ingrid
;
White, M. E.
;
O'Donnell, K. P.
;
Nistor, Leona
;
Van Landuyt, J.
;
Bender, Hugo
Journal
MRS Internet Journal of Nitride Semiconductor Research
Abstract
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1970
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1970
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations